Professor Halit Altuntas
About
Biography
Prof. Halit Altuntas received his B.S., MS., and PhD. degrees in Physics from Gazi University, Ankara, Turkey, in 2001, 2004, and 2009, respectively. He joined Cankiri Karatekin University (Cankiri, Turkey) in 2010, where he is currently a full professor in Physics department. He was a PhD. visiting resarcher at Submicron Center-Weizmann Institute of Science (Israel) in 2008 and post-doctorate visiting researcher at the University of Helsinki (Finland) in 2015.
His research activities focus on MBE growth of QW-structures, electrical characteristics of metal-oxide thin films, dielectrics, and carbon nanotube field-effect transistor type sensors. He has published 24 papers. He joined to ATI as a visiting professor in 2018 and continues to cooperate with ATI.
Publications
Highlights
H. Altuntas, K.Kaplan, “Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition”, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 86 , 11-114 (2018).
H. Altuntas, T. Bayrak, “A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition” ELECTRONIC MATERIALS LETTERS, 13 (2), 114-119 (2017).
H. Altuntas, T. Bayrak, S. Kizir, A. Haider, N. Biyikli, “Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition”, SEMICONDUCTOR SCIENCE & TECHNOLOGY, 31, 075003 (2016).
H. Altuntas, C. Ozgit-Akgun, I. Donmez, N. Biyikli, “Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by PlasmaEnhanced Atomic Layer Deposition”, IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 3627-3632 (2015).
H. Altuntas, C. Ozgit-Akgun, I. Donmez, N. Biyikli, “Current transport mechanisms in plasma enhanced atomic layer deposited AlN thin films”, JOURNAL OF APPLIED PHYSICS, 117, 155101 (2015).
H. Altuntas, I. Donmez, C. Ozgit-Akgun, N. Biyikli, “Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32, 041504 (2014).
H. Altuntas, I. Donmez, C. Ozgit-Akgun, N. Biyikli, “Electrical characteristics of beta-Ga2O3 thin films grown by PEALD”, JOURNAL OF ALLOYS AND COMPOUNDS, 593, 190-195 (2014).
H. Altuntas, S. Ozcelik, “The analysis of leakage current in MIS Au/SiO2/n-GaAs at room temperature”, SEMICONDUCTORS, 47, 1308-1311 (2013).
H. Altuntas, S. Ozcelik, “The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures”, JOURNAL OF ALLOYS AND COMPOUNDS, 577, 143-147 (2013).
M. Gokcen, H. Altuntas, S. Altindal, S. Ozcelik, “Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures”, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 15 (1), 41-46 (2012).
H. Altuntas, S. Altindal, S. Corekci, M. K. Ozturk, S. Ozcelik, “Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer”, SEMICONDUCTORS, 45 (10), 1286-1290 (2011).
H. Altuntas, A. Bengi, T. Asar, U. Aydemir, B. Sarikavak, Y. Ozen, S. Altindal, S. Ozcelik “Interface state density analyzing of Au/TiO2(Rutile)/n-Si Schottky barrier diode”, SURFACE AND INTERFACE ANALYSIS, 42, 1257-1260 (2010).
I. Kars, S. S. Çetin, B. Kınacı, B. Sarikavak, A. Bengi, H. Altuntas, M. K. Ozturk, S. Ozcelik, “Influence of thermal annealing on the structure and optical properties of d.c. magnetron sputtered titanium dioxide thin films” SURFACE AND INTERFACE ANALYSIS, 42, 1247-1251 (2010).
H. Altuntas, S. Altindal, H. Shtrikman, S. Ozcelik, “A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range”, MICROELECTRONICS RELIABILITY, 49, 904-911 (2009).
H. Altuntas, S. Altindal, S. Ozcelik, H. Shtrikman, “Electrical characterization of Au/n-GaAs Schottky Barrier Diodes with and without SiO2 Insulator layer at room temperature ”, VACUUM, 83, 1060-1065 (2009).
H. Altuntas, A. Bengi, U. Aydemir, T. Asar, S. S. Cetin, I. Kars, S. Altindal, S. Ozcelik, “Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range”, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 12, 224-232 (2009).
M. Gokcen, H. Altuntas, “On the profile of temperature dependent electrical and dielectrical properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies”, PHYSICA B- CONDENSED MATTER, 404, 4221-4224 (2009).
S. B. Lisesivdin, H. Altuntas, A. Yildiz, M. Kasap, E. Ozbay, S. Ozcelik, “DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content” SUPERLATTICES AND MICROSTRUCTURES, 45, 604-611 (2009).
A. Yildiz, S. B. Lisesivdin, H. Altuntas, M. Kasap, S. Ozcelik, “Electrical conduction properties of Si δ-doped GaAs grown by MBE” PHYSICA B- CONDENSED MATTER, 404, 4202-4206 (2009).
B. Sarikavak, , M. K. Ozturk, H. Altuntas, T. Mamedov, S. Altindal, S. Ozcelik, “MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice” REVISTA MEXICANA DE FISICA, 54, 416-421 (2008).
M. K. Ozturk, H. Altuntas, S. Corekci, Y. Hongbo, S. Ozcelik, E. Ozbay “Strain-stress analysis of AlGaN/GaN heterostructures with and without AlN buffer and interlayer”, STRAIN, 47 (S2) 19-27 (2011).
H. Altuntas, S. Ozcelik, “ Growth and characterization of AlGaAs/GaAs quantum well infrared photodetectors”, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 4 (2), 132-135 (2010).
M. Gokcen, H. Altuntas, S. Altindal “Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures”, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2(12), 838-841 (2008).
M. Gokcen, H. Altuntas, S. Altindal “Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness” OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2(12), 833-837 (2008).