Single ion implantation for quantum technologies

While impurities and defects are often unwanted, they can be opportunities in disguise, as they possess valuable properties for various quantum applications, including sensing, information storage, processing, and communication. Defects and impurities in the solid state, such as the phosphorus donor in silicon, the erbium ion in a transparent oxide, or the nitrogen-vacancy complex in diamond, are atomic-scale quantum entities.

Some of these entities can serve as quantum bits (qubits) in quantum computers, provide a source of single photons crucial for secure quantum communication, act as quantum repeaters for transmitting quantum information over long distances, function as quantum memories for high-fidelity storage of quantum information, or operate as quantum sensors, such as ultra-sensitive magnetic field sensors that have been recently commercialised. Crucially, these defects and impurities can be produced in large numbers and integrated into solid-state quantum devices through focussed beam single ion implantation.

The aim of this project is to advance the capability of single ion implantation by the implementation and analysis of novel ion sources, improved detection efficiencies of ion implantation events, and development of both in-situ and post implantation materials characterisation.

All facilities associated with the Ion Beam Centre and the Advanced Technology Institute at the University of Surrey relevant to the project will be made available to the successful candidate. The student will gain a wide range of transferable skills through the University of Surrey’s Doctoral College and they will have the opportunity to collaborate with top quality research groups, while operating at the forefront of knowledge.

Open to candidates who pay UK/home rate fees.

Candidates must hold a first-class degree or equivalent or distinction at masters level.